Domain configurations in dislocations embedded hexagonal manganite systems: From the view of graph theory

Cheng, Shaobo; Zhang, Dong; Deng, Shiqing; Li, Xing; Li, Jun; Tan, Guotai; Zhu, Yimei; Zhu, Jing

doi:10.1063/1.5024790

Title: Domain configurations in dislocations embedded hexagonal manganite systems: From the view of graph theory

Journal Article · Thu Apr 19 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5024790· OSTI ID:1456899

Cheng, Shaobo ^[1]; Zhang, Dong ^[2]; Deng, Shiqing ^[1]; Li, Xing ^[3]; Li, Jun ^[4];

^[5];

^[4]; Zhu, Jing ^[1]

Tsinghua Univ., Beijing (China). National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE)
Peking Univ., Beijing (China). LMAM and School of Mathematical Sciences
Zhengzhou University (China). Department of Engineering Physics
Brookhaven National Lab. (BNL), Upton, NY (United States). Department of Condensed Matter Physics and Materials Science
Beijing Normal University (China). Department of Physics

Topological defects and their interactions often arouse multiple types of emerging phenomena from edge states in Skyrmions to disclination pairs in liquid crystals. In hexagonal manganites, partial edge dislocations, a prototype topological defect, are ubiquitous and they significantly alter the topologically protected domains and their behaviors. In this work, combining electron microscopy experiment and graph theory analysis, we report a systematic study of the connections and configurations of domains in this dislocation embedded system. Rules for domain arrangement are established. The dividing line between domains, which can be attributed by the strain field of dislocations, is accurately described by a genus model from a higher dimension in the graph theory. In conclusion, our results open a door for the understanding of domain patterns in topologically protected multiferroic systems.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704; AC02-98CH10886

OSTI ID:: 1456899

Report Number(s):: BNL-205788-2018-JAAM; TRN: US1901255

Journal Information:: Applied Physics Letters, Vol. 112, Issue 16; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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