Deformable Organic Nanowire Field-Effect Transistors

Lee, Yeongjun; Oh, Jin Young; Kim, Taeho Roy; Gu, Xiaodan; Kim, Yeongin; Wang, Ging-Ji Nathan; Wu, Hung -Chin; Pfattner, Raphael; To, John W. F.; Katsumata, Toru; Son, Donghee; Kang, Jiheong; Matthews, James R.; Niu, Weijun; He, Mingqian; Sinclair, Robert; Cui, Yi; Tok, Jeffery B. -H.; Lee, Tae -Woo; Bao, Zhenan

doi:10.1002/adma.201704401

Title: Deformable Organic Nanowire Field-Effect Transistors

Journal Article · Mon Jan 08 00:00:00 EST 2018 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201704401· OSTI ID:1437556

Lee, Yeongjun ^[1]; Oh, Jin Young ^[2]; Kim, Taeho Roy ^[2]; Gu, Xiaodan ^[3]; Kim, Yeongin ^[2]; Wang, Ging-Ji Nathan ^[2]; Wu, Hung -Chin ^[2]; Pfattner, Raphael ^[2]; To, John W. F. ^[2]; Katsumata, Toru ^[2]; Son, Donghee ^[2]; Kang, Jiheong ^[2]; Matthews, James R. ^[4]; Niu, Weijun ^[4]; He, Mingqian ^[4]; Sinclair, Robert ^[2]; Cui, Yi ^[2]; Tok, Jeffery B. -H. ^[2];

^[5]; Bao, Zhenan ^[2]

Pohang Univ. of Science and Technology (POSTECH), Gyeongbuk (Republic of Korea); Stanford Univ., Stanford, CA (United States)
Stanford Univ., Stanford, CA (United States)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Corning Inc., Corning, NY (United States)
Seoul National Univ., Seoul (Republic of Korea)

Abstract Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next‐generation implantable bioelectronic devices. Here, deformable field‐effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high‐molecular‐weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field‐effect mobility >8 cm ² V ⁻¹ s ⁻¹ with poly(vinylidenefluoride‐ co ‐trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine‐like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min ⁻¹ (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: 2013M3A6A5073175; NRF-2016R1A3B1908431; FOA-0000654-1588; AC02-76SF00515; DE‐FOA‐0000654‐1588

OSTI ID:: 1437556

Alternate ID(s):: OSTI ID: 1416392

Journal Information:: Advanced Materials, Vol. 30, Issue 7; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 72 works

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Figure 1(p. 30)

Figure 2(p. 32)

Figure 3(p. 33)

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