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Title: Influence of magnetism and correlation on the spectral properties of doped Mott insulators

Journal Article · · Physical Review. B
 [1];  [2];  [3];  [4];  [5]
  1. Stanford Univ., CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Harvard Univ., Cambridge, MA (United States). Dept. of Physics
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Univ. of North Dakota, Grand Forks, ND (United States). Dept. of Physics and Astrophysics
  3. Univ. of Alabama, Birmingham, AL (United States). Dept. of Physics
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  5. Univ. of Warsaw (Poland). Inst. of Theoretical Physics, Faculty of Physics

Unraveling the nature of the doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. Here, for this purpose, we study the evolution of spectral properties upon doping Mott insulating states by utilizing the cluster perturbation theory on the Hubbard and t – J -like models. Specifically, a quasifree dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free-electron hopping, our study shows that this spectral feature is, in fact, influenced inherently by both electron-electron correlation and spin-exchange interaction: the correlation destroys coherence, while the coupling between spin and mobile charge restores it in the photoemission spectrum. Due to the persistent impact of correlations and spin physics, the onset of gaps or the high-energy anomaly in the spectral functions can be expected in doped Mott insulators.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
Grant/Contract Number:
AC02-76SF00515; AC02-05CH11231
OSTI ID:
1436988
Alternate ID(s):
OSTI ID: 1425532
Journal Information:
Physical Review. B, Vol. 97, Issue 11; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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Cited By (1)

Effect of Short-Range Correlations on Spectral Properties of Doped Mott Insulators journal November 2018

Figures / Tables (6)


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