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Title: Unexpectedly high piezoelectricity of Sm-doped lead zirconate titanate in the Curie point region

Journal Article · · Scientific Reports
 [1];  [2];  [3];  [4];  [5];  [3];  [6];  [7];  [2];  [8];  [3]
  1. Univ. of Florida, Gainesville, FL (United States); North Carolina State Univ., Raleigh, NC (United States); Intel Corporation, OR (United States)
  2. Univ. of Florida, Gainesville, FL (United States)
  3. North Carolina State Univ., Raleigh, NC (United States)
  4. Univ. of Leeds (United Kingdom)
  5. Technische Univ. Darmstadt (Germany)
  6. Luxembourg Inst. of Science & Technology, Esch, Alzette (Luxembourg)
  7. Univ. of Warwick, Coventry (United Kingdom)
  8. Jozef Stefan Inst., Ljubljana (Slovenia)

Large piezoelectric coefficients in polycrystalline lead zirconate titanate (PZT) are traditionally achieved through compositional design using a combination of chemical substitution with a donor dopant and adjustment of the zirconium to titanium compositional ratio to meet the morphotropic phase boundary (MPB). In this work, a different route to large piezoelectricity is demonstrated. Results reveal unexpectedly high piezoelectric coefficients at elevated temperatures and compositions far from the MPB. At temperatures near the Curie point, doping with 2 at% Sm results in exceptionally large piezoelectric coefficients of up to 915 pm/V. This value is approximately twice those of other donor dopants (e.g., 477 pm/V for Nb and 435 pm/V for La). Structural changes during the phase transitions of Sm-doped PZT show a pseudo-cubic phase forming ≈50 °C below the Curie temperature. Possible origins of these effects are discussed and the high piezoelectricity is posited to be due to extrinsic effects. The enhancement of the mechanism at elevated temperatures is attributed to the coexistence of tetragonal and pseudo-cubic phases, which enables strain accommodation during electromechanical deformation and interphase boundary motion. This work provides insight into possible routes for designing high performance piezoelectrics which are alternatives to traditional methods relying on MPB compositions.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
National Science Foundation (NSF); US Army Research Office (ARO); USDOE Office of Science (SC), Basic Energy Sciences (BES); Slovenian Research Agency (ARRS)
Grant/Contract Number:
DMR-0746902; OISE-0755170; W911NF-09-1-0435; AC02-06CH11357; DMR-1409399
OSTI ID:
1436788
Journal Information:
Scientific Reports, Vol. 8, Issue 1; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
ENGLISH
Citation Metrics:
Cited by: 26 works
Citation information provided by
Web of Science

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Cited By (1)

Dielectric Behavior of PZT/Graphene Oxide Composites journal July 2019