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Title: Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn 1 - x In x Te for x 0.10

Journal Article · · Physical Review B
 [1];  [2];  [2];  [3];  [3];  [4];  [5];  [6];  [7];  [8];  [8];  [8];  [9];  [2];  [2]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Notre Dame, IN (United States). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Univ. of Notre Dame, IN (United States). Dept. of Physics
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  5. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States). Materials Science and Engineering Dept.
  6. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy
  7. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  8. Western Michigan Univ., Kalamazoo, MI (United States). Dept. of Physics
  9. Inst. Laue-Langevin, Grenoble (France)

The temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn1-xInx Te was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance Tc, indicating that ferroelectric interactions do not compete with superconductivity.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Notre Dame, IN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Brookhaven National Lab. (BNL), Upton, NY (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725; SC0005051; SC0012704
OSTI ID:
1422598
Alternate ID(s):
OSTI ID: 1417506; OSTI ID: 1425063; OSTI ID: 1432141
Report Number(s):
BNL-200080-2018-JAAM; TRN: US1801635
Journal Information:
Physical Review B, Vol. 97, Issue 2; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 11 works
Citation information provided by
Web of Science

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Cited By (1)

Band structure engineering in Sn 1.03 Te through an In-induced resonant level journal January 2020

Figures / Tables (7)