Molecular Dynamics Studies of Defect Reduction in InxGa1-xN/GaN Based Nanostructures.
Conference
·
OSTI ID:1420805
- Drexel University
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1420805
- Report Number(s):
- SAND2016-11403C; 649032
- Resource Relation:
- Conference: Proposed for presentation at the Global Conference on Nanotechnology and Materials Science held April 24-26, 2017 in Las Vegas, Nevada.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Native defects in InxGa1-xN alloys
Towards Model-Guided Defect Reduction in Cd1-xZnxTe/CdS Solar Cells: Development of Molecular Dynamics Models.
Nanostructural Engineering of Nitride Nucleation Layers for GaN Substrate Dislocation Reduction (invited).
Conference
·
Fri Aug 19 00:00:00 EDT 2005
·
OSTI ID:1420805
+7 more
Towards Model-Guided Defect Reduction in Cd1-xZnxTe/CdS Solar Cells: Development of Molecular Dynamics Models.
Conference
·
Fri Nov 01 00:00:00 EDT 2013
·
OSTI ID:1420805
+1 more
Nanostructural Engineering of Nitride Nucleation Layers for GaN Substrate Dislocation Reduction (invited).
Conference
·
Fri Jun 01 00:00:00 EDT 2007
·
OSTI ID:1420805
+1 more