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Title: Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Patent ·
OSTI ID:1417969
;

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Number(s):
9,875,894
Application Number:
14/563,201
OSTI ID:
1417969
Resource Relation:
Patent File Date: 2014 Dec 08
Country of Publication:
United States
Language:
English

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Graphene layer formation at low substrate temperature on a metal and carbon based substrate patent-application October 2013
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