Tuning charge and correlation effects for a single molecule on a graphene device

Wickenburg, Sebastian; Lu, Jiong; Lischner, Johannes; Tsai, Hsin-Zon; Omrani, Arash A.; Riss, Alexander; Karrasch, Christoph; Bradley, Aaron; Jung, Han Sae; Khajeh, Ramin; Wong, Dillon; Watanabe, Kenji; Taniguchi, Takashi; Zettl, Alex; Neto, A. H.  Castro; Louie, Steven G.; Crommie, Michael F.

doi:10.1038/ncomms13553

Title: Tuning charge and correlation effects for a single molecule on a graphene device

Journal Article · Fri Nov 25 00:00:00 EST 2016 · Nature Communications

DOI:https://doi.org/10.1038/ncomms13553· OSTI ID:1411644

Wickenburg, Sebastian ^[1]; Lu, Jiong ^[2]; Lischner, Johannes ^[3]; Tsai, Hsin-Zon ^[4]; Omrani, Arash A. ^[4]; Riss, Alexander ^[5]; Karrasch, Christoph ^[6]; Bradley, Aaron ^[4]; Jung, Han Sae ^[4]; Khajeh, Ramin ^[4]; Wong, Dillon ^[4];

^[7]; Taniguchi, Takashi ^[7]; Zettl, Alex ^[8]; Neto, A. H. Castro ^[9]; Louie, Steven G. ^[1]; Crommie, Michael F. ^[8]

Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Univ. of California, Berkeley, CA (United States). Dept. of Physics; National Univ. of Singapore (Singapore). Dept. of Chemistry. Centre for Advanced 2D Materials and Graphene Research
Univ. of California, Berkeley, CA (United States). Dept. of Physics; Imperial College, London (United Kingdom). Dept. of Materials
Univ. of California, Berkeley, CA (United States). Dept. of Physics
Univ. of California, Berkeley, CA (United States). Dept. of Physics; Technical Univ. of Munich, Garching (Germany). Dept. of Physics
Univ. of California, Berkeley, CA (United States). Dept. of Physics; Freie Univ., Berlin (Germany). Dahlem Center for Complex Quantum Systems. Dept. of Physics
National Inst. for Materials Science (NIMS), Tsukuba (Japan)
Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Kavli Energy NanoSciences Inst., Berkeley, CA (United States)
National Univ. of Singapore (Singapore). Centre for Advanced 2D Materials and Graphene Research. Dept. of Physics

The ability to understand and control the electronic properties of individual molecules in a device environment is crucial for developing future technologies at the nanometre scale and below. Achieving this, however, requires the creation of three-terminal devices that allow single molecules to be both gated and imaged at the atomic scale. We have accomplished this by integrating a graphene field effect transistor with a scanning tunnelling microscope, thus allowing gate-controlled charging and spectroscopic interrogation of individual tetrafluoro-tetracyanoquinodimethane molecules. We observe a non-rigid shift in the molecule’s lowest unoccupied molecular orbital energy (relative to the Dirac point) as a function of gate voltage due to graphene polarization effects. Our results show that electron–electron interactions play an important role in how molecular energy levels align to the graphene Dirac point, and may significantly influence charge transport through individual molecules incorporated in graphene-based nanodevices.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Japan); Japan Society for the Promotion of Science (JSPS); National Research Foundation (NRF) (Singapore); Engineering and Physical Sciences Research Council (EPSRC); Austrian Science Fund (FWF)

Grant/Contract Number:: AC02-05CH11231; DMR-1206512; DRM-1508412; R-144-000-295-281; EP/N005244/1; J3026-N16

OSTI ID:: 1411644

Journal Information:: Nature Communications, Vol. 7; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 73 works

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