Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

Schwartz, J.; Aloni, S.; Ogletree, D. F.; Schenkel, T.

doi:10.1088/1367-2630/14/4/043024

Title: Effects of low-energy electron irradiation on formation of nitrogen–vacancy centers in single-crystal diamond

Journal Article · Fri Apr 20 00:00:00 EDT 2012 · New Journal of Physics

DOI:https://doi.org/10.1088/1367-2630/14/4/043024· OSTI ID:1407152

Schwartz, J. ^[1]; Aloni, S. ^[2]; Ogletree, D. F. ^[2]; Schenkel, T. ^[1]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator and Fusion Research Division
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry

Exposure to beams of low-energy electrons (2-30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. In this study, we find that non-thermal, electron-beam-induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800°C) following exposure to low-energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. Finally, these observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low-energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1407152

Journal Information:: New Journal of Physics, Vol. 14, Issue 4; ISSN 1367-2630

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 33 works

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