Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal

Shrestha, K.; Marinova, V.; Graf, D.; Lorenz, B.; Chu, C. W.

doi:10.1063/1.4998575

Title: Large magnetoresistance and Fermi surface study of Sb₂Se₂Te single crystal

Journal Article · Mon Sep 25 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4998575· OSTI ID:1402685

Shrestha, K. ^[1]; Marinova, V. ^[2]; Graf, D. ^[3]; Lorenz, B. ^[4]; Chu, C. W. ^[5]

Idaho National Lab. (INL), Idaho Falls, ID (United States)
Bulgarian Academy of Sciences, Sofia (Bulgaria). Inst. of Optical Materials and Technology
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab.
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Here, we have studied the magnetotransport properties of a Sb₂Se₂Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz–Kosevich formula, are found to be m$$*\atop{β}$$= 0.16m_o and m$$*\atop{γ}$$= 0.63m_o for the β and γ bands, respectively. The Large MR of Sb₂Se₂Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.

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Research Organization:: Idaho National Lab. (INL), Idaho Falls, ID (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T. L. L. Temple Foundation; Bulgaria National Science Fund (BNSF); National Science Foundation (NSF)

Grant/Contract Number:: AC07-05ID14517; FNI-T-02/26; DMR-1157490

OSTI ID:: 1402685

Report Number(s):: INL/JOU-17-43482

Journal Information:: Journal of Applied Physics, Vol. 122, Issue 12; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal

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Title: Large magnetoresistance and Fermi surface study of Sb₂Se₂Te single crystal