Diffusivity of the interstitial hydrogen shallow donor in In2O3

Qin, Ying; Weiser, Philip; Villalta, Karla; Stavola, Michael; Fowler, W. Beall; Biaggio, Ivan; Boatner, Lynn

doi:10.1063/1.4995593

Title: Diffusivity of the interstitial hydrogen shallow donor in In₂O₃

Journal Article · Fri Oct 06 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4995593· OSTI ID:1399982

^[1]; Weiser, Philip ^[1]; Villalta, Karla ^[1];

^[1]; Fowler, W. Beall ^[1]; Biaggio, Ivan ^[1];

^[2]

Lehigh Univ., Bethlehem, PA (United States). Dept. of Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

Hydrogen has been found to be an n-type dopant in In₂O₃ that gives rise to unintentional conductivity. An infrared (IR) absorption line observed at 3306 cm^–1 has been assigned to the H_i⁺ center. In this work, two types of experiments have been performed to determine the diffusivity of H_i⁺ in In₂O₃ from its IR absorption spectra. (i) At temperatures near 700 K, the O-H line at 3306 cm^–1 has been used to determine the diffusivity of H_i⁺ from its in-diffusion and out-diffusion behaviors. (ii) At temperatures near 160 K, stress has been used to produce a preferential alignment of the H_i⁺ center that has been detected in IR absorption experiments made with polarized light. With the help of theory, the kinetics with which a stress-induced alignment can be produced yield the time constant for a single jump of the H_i⁺ center and also the diffusivity of H_i⁺ near 160 K. The combination of the diffusivity of H_i⁺ found near 700 K by mass-transport measurements and that found near 160 K from the time constant for a single H_i⁺ jump determines the diffusivity for H_i⁺ over eleven decades!

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC05-00OR22725; DMR 1160756

OSTI ID:: 1399982

Alternate ID(s):: OSTI ID: 1398294

Journal Information:: Journal of Applied Physics, Vol. 123, Issue 16; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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References (15)

Hydrogen centers and the conductivity of $I n_{2} O_{3}$ single crystals Yin, Weikai; Smithe, Kirby; Weiser, Philip Physical Review B, Vol. 91, Issue 7 https://doi.org/10.1103/PhysRevB.91.075208	journal	February 2015
Motional characteristics of positively charged muonium defects in In2O3 Baker, B. B.; Celebi, Y. G.; Lichti, R. L. INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, AIP Conference Proceedings https://doi.org/10.1063/1.4865662	conference	January 2014
Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells Koida, Takashi; Sai, Hitoshi; Kondo, Michio Thin Solid Films, Vol. 518, Issue 11 https://doi.org/10.1016/j.tsf.2009.08.060	journal	March 2010
Electrical Conductivity and Growth of Single‐Crystal Indium Sesquioxide Remeika, J. P.; Spencer, E. G. Journal of Applied Physics, Vol. 35, Issue 10 https://doi.org/10.1063/1.1713110	journal	October 1964
Shallow donor state of hydrogen in ${In}_{2} O_{3}$ and ${SnO}_{2}$ : Implications for conductivity in transparent conducting oxides King, P. D. C.; Lichti, R. L.; Celebi, Y. G. Physical Review B, Vol. 80, Issue 8 https://doi.org/10.1103/PhysRevB.80.081201	journal	August 2009
Hydrogen-doped In₂O₃ as High-mobility Transparent Conductive Oxide Koida, Takashi; Fujiwara, Hiroyuki; Kondo, Michio https://doi.org/10.1143/JJAP.46.L685		July 2007
Evaporated Sn‐doped In ₂ O ₃ films: Basic optical properties and applications to energy‐efficient windows Hamberg, I.; Granqvist, C. G. Journal of Applied Physics, Vol. 60, Issue 11 https://doi.org/10.1063/1.337534	journal	December 1986
On the solid phase crystallization of In ₂ O ₃ :H transparent conductive oxide films prepared by atomic layer deposition Macco, Bart; Verheijen, Marcel A.; Black, Lachlan E. Journal of Applied Physics, Vol. 120, Issue 8 https://doi.org/10.1063/1.4962008	journal	August 2016
Hydrogen doping in indium oxide: An ab initio study Limpijumnong, Sukit; Reunchan, Pakpoom; Janotti, Anderson Physical Review B, Vol. 80, Issue 19 https://doi.org/10.1103/PhysRevB.80.193202	journal	November 2009
Simultaneous diffusion of oppositely charged impurities in semiconductors Klein, T.; Beale, J. R. A. Solid-State Electronics, Vol. 9, Issue 1 https://doi.org/10.1016/0038-1101(66)90025-6	journal	January 1966
Bulk and surface characterization of In $_{2}$ O $_{3}$ (001) single crystals Hagleitner, Daniel R.; Menhart, Manfred; Jacobson, Peter Physical Review B, Vol. 85, Issue 11 https://doi.org/10.1103/PhysRevB.85.115441	journal	March 2012
The configuration and diffusion of isolated oxygen in silicon and germanium Corbett, J. W.; McDonald, R. S.; Watkins, G. D. Journal of Physics and Chemistry of Solids, Vol. 25, Issue 8 https://doi.org/10.1016/0022-3697(64)90100-3	journal	August 1964
The 3942- ${cm}^{- 1}$ optical band in irradiated silicon Davies, Gordon; Lightowlers, Edward C.; Stavola, Michael Physical Review B, Vol. 35, Issue 6 https://doi.org/10.1103/PhysRevB.35.2755	journal	February 1987
Structure and dynamics of the Be-H complex in GaAs Stavola, Michael; Pearton, S. J.; Lopata, J. Physical Review B, Vol. 39, Issue 11 https://doi.org/10.1103/PhysRevB.39.8051	journal	April 1989
Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3 Weiser, Philip; Qin, Ying; Yin, Weikai Applied Physics Letters, Vol. 109, Issue 20 https://doi.org/10.1063/1.4967943	journal	November 2016

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