Controllable growth of vertically aligned graphene on C-face SiC

Liu, Yu; Chen, Lianlian; Hilliard, Donovan; Huang, Qing-song; Liu, Fang; Wang, Mao; Böttger, Roman; Hübner, René; N’Diaye, Alpha T.; Arenholz, Elke; Heera, Viton; Skorupa, Wolfgang; Zhou, Shengqiang

doi:10.1038/srep34814

Title: Controllable growth of vertically aligned graphene on C-face SiC

Journal Article · Thu Oct 06 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep34814· OSTI ID:1377529

Liu, Yu ^[1]; Chen, Lianlian ^[2]; Hilliard, Donovan ^[3]; Huang, Qing-song ^[4]; Liu, Fang ^[5]; Wang, Mao ^[5]; Böttger, Roman ^[1]; Hübner, René ^[1]; N’Diaye, Alpha T. ^[6]; Arenholz, Elke ^[6]; Heera, Viton ^[1]; Skorupa, Wolfgang ^[1]; Zhou, Shengqiang ^[1]

Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Ion Beam Physics and Materials Research
Beijing Information and Technology Univ. (China). Dept. of Basic Science
Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Ion Beam Physics and Materials Research; Dublin Inst. of Technology (Ireland). School of Physics
Sichuan Univ., Chengdu (China). School pf Chemical Engineering
Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Ion Beam Physics and Materials Research; Technische Univ. Dresden (Germany)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d⁰ magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1377529

Journal Information:: Scientific Reports, Vol. 6, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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