skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4]
  1. DGIST, Daegu (Korea)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  4. Beijing Computational Science Research Center, Beijing (China)

In this paper, nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si2AlP (or Si2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and optical properties of the nonisovalent alloys.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308; EE00025783
OSTI ID:
1375690
Alternate ID(s):
OSTI ID: 1369583
Report Number(s):
NREL/JA-5J00-68898; PRBMDO; TRN: US1702796
Journal Information:
Physical Review B, Vol. 96, Issue 4; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

References (17)

Chemical Design of Direct-Gap Light-Emitting Silicon journal July 2002
(Si) 5−2 y (AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units journal January 2012
Computational search for direct band gap silicon crystals journal September 2014
Ordering-induced direct-to-indirect band gap transition in multication semiconductor compounds journal February 2015
Projector augmented-wave method journal December 1994
Hybrid functionals based on a screened Coulomb potential journal May 2003
Theory of zone‐folded optical transitions in semiconductor superlattices journal December 1993
Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach journal March 2013
Dipole-allowed direct band gap silicon superlattices journal December 2015
Direct Band Gap Silicon Allotropes journal July 2014
Photovoltaic materials: Present efficiencies and future challenges journal April 2016
Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors journal January 2012
Nanosynthesis Routes to New Tetrahedral Crystalline Solids: Silicon-like Si 3 AlP journal October 2011
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Si 3 AlP: A New Promising Material for Solar Cell Absorber journal July 2012
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Nanostructure–Property Control in AlPSi 3 /Si(100) Semiconductors Using Direct Molecular Assembly: Theory Meets Experiment at the Atomic Level journal June 2014