Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

LeBlanc, E. G.; Edirisooriya, M.; Ogedengbe, O. S.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Rab, S.; Swartz, C. H.; Diercks, D. R.; Burton, G. L.; Gorman, B. P.; Wang, A.; Barnes, T. M.; Myers, T. H.

doi:10.1007/s11664-017-5589-3

Title: Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

Journal Article · Mon Jun 05 00:00:00 EDT 2017 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-017-5589-3· OSTI ID:1374127

LeBlanc, E. G. ^[1]; Edirisooriya, M. ^[1]; Ogedengbe, O. S. ^[1]; Noriega, O. C. ^[1]; Jayathilaka, P. A. R. D. ^[1]; Rab, S. ^[1]; Swartz, C. H. ^[1]; Diercks, D. R. ^[2]; Burton, G. L. ^[2]; Gorman, B. P. ^[2]; Wang, A. ^[3]; Barnes, T. M. ^[4]; Myers, T. H. ^[1]

Texas State Univ., San Marcos, TX (United States)
Colorado School of Mines, Golden, CO (United States)
EAG Laboratories (Evans Analytical Group), Sunnyvale, CA (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd_1-xMg_xTe barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd_1-xMg_xTe layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd_1-xMg_xTe double heterostructures is discussed. Furthermore, the stability of CdTe/Cd_1-xMg_xTe heterostructures are investigated with respect to thermal processing.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1374127

Report Number(s):: NREL/JA-5K00-68890

Journal Information:: Journal of Electronic Materials, Vol. 46, Issue 9; ISSN 0361-5235

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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