Manipulating the polar mismatch at the LaNiO3/SrTiO3 (111) interface

Saghayezhian, M.; Wang, Zhen; Guo, Hangwen; Zhu, Yimei; Plummer, E. W.; Zhang, Jiandi

doi:10.1103/PhysRevB.95.165434

Title: Manipulating the polar mismatch at the $LaNi O_{3} / SrTi O_{3}$ (111) interface

Journal Article · Thu Apr 20 00:00:00 EDT 2017 · Physical Review. B

DOI:https://doi.org/10.1103/PhysRevB.95.165434· OSTI ID:1372442

Saghayezhian, M. ^[1]; Wang, Zhen ^[2]; Guo, Hangwen ^[1]; Zhu, Yimei ^[3]; Plummer, E. W. ^[1]; Zhang, Jiandi ^[1]

Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy
Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy; Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.

Heteroepitaxial growth of transition-metal oxide films on the open (111) surface of SrTi O ₃ results in significant restructuring due to the polar mismatch. Monitoring the structure and composition on an atomic scale of LaNi O ₃ / SrTi O ₃ (111) interface as a function of processing conditions has enabled the avoidance of the expected polar catastrophe. Using atomically resolved transmission electron microscopy and spectroscopy as well as low-energy electron diffraction, the structure of the thin film, from interface to the surface, has been studied. Here, we show that the proper processing can lead to a structure that is ordered, coherent with the substrate without intermediate structural phase. Using angle-resolved x-ray photoemission spectroscopy we show that the oxygen content of thin films increases with the film thickness, which indicates that the polar mismatch is avoided by the presence of oxygen vacancies.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704; SC0002136; AC02-98CH10886

OSTI ID:: 1372442

Alternate ID(s):: OSTI ID: 1352464

Report Number(s):: BNL-114015-2017-JA; PRBMDO; R&D Project: MA015MACA; KC0201010; TRN: US1702669

Journal Information:: Physical Review. B, Vol. 95, Issue 16; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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Atomic resolution of interface diffusing in short-period InAs/GaSb superlattice Cui, J.; Yao, Y.; Jiang, D. W. Journal of Applied Physics, Vol. 124, Issue 24 https://doi.org/10.1063/1.5059350	journal	December 2018
Removal of the Magnetic Dead Layer by Geometric Design Guo, Er-Jia; Roldan, Manuel A.; Charlton, Timothy Advanced Functional Materials, Vol. 28, Issue 30 https://doi.org/10.1002/adfm.201800922	journal	May 2018

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