Spatially resolved, substrate-induced rectification in C60 bilayers on copper
- Univ. of Central Lancashire, Preston (United Kingdom)
- Argonne National Lab. (ANL), Argonne, IL (United States)
Here, we demonstrate rectification ratios (RR) of ≳1000 at biases of 1.3 V in bilayers of C60 deposited on copper. Using scanning tunneling spectroscopy and first-principles calculations, we show that the strong coupling between C60 and the Cu(111) surface leads to the metallization of the bottom C60 layer, while the molecular orbitals of the top C60 are essentially unaffected. Due to this substrate-induced symmetry breaking and to a tunneling transport mechanism, the system behaves as a hole-blocking layer, with a spatial dependence of the onset voltage on intra-layer coordination. Together with previous observations of strong electron-blocking character of pentacene/C60 bilayers on Cu(111), this work further demonstrates the potential of strongly hybridized, C60-coated electrodes to harness the electrical functionality of molecular components.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-06CH11357; FG02-09ER16109
- OSTI ID:
- 1371915
- Alternate ID(s):
- OSTI ID: 1349344
- Journal Information:
- Journal of Chemical Physics, Vol. 146, Issue 9; ISSN 0021-9606
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Preface: Special Topic on Frontiers in Molecular Scale Electronics
|
journal | March 2017 |
Preface: Special Topic on Frontiers in Molecular Scale Electronics
|
text | January 2017 |
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