Efficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area

Seyedi, M. A.; Yao, M.; O'Brien, J.; Wang, S. Y.; Dapkus, P. D.

doi:10.1063/1.4891764

Title: Efficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891764· OSTI ID:1369873

Seyedi, M. A. ^[1]; Yao, M. ^[1]; O'Brien, J. ^[1]; Wang, S. Y. ^[1]; Dapkus, P. D. ^[1]

Univ. of Southern California, Los Angeles, CA (United States)

Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50 $$μ$$m square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10 GHz at various applied reverse biases and optical intensities to explore the effects of photo-generated carrier screening on modulation bandwidth. Last, the bandwidth dependence on applied reverse bias and optical intensity is simulated as a means to quantify average carrier velocities in nanowire material systems.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001013

OSTI ID:: 1369873

Journal Information:: Applied Physics Letters, Vol. 105, Issue 4; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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References (11)

10-Gb/s 850-nm CMOS OEIC Receiver With a Silicon Avalanche Photodetector Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob IEEE Journal of Quantum Electronics, Vol. 48, Issue 2 https://doi.org/10.1109/JQE.2011.2170405	journal	February 2012
Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction Seyedi, M. A.; Yao, M.; O'Brien, J. Applied Physics Letters, Vol. 103, Issue 25 https://doi.org/10.1063/1.4852136	journal	December 2013
30 Gbit/s, 850 nm, VCSEL-based optical link Schow, C. L.; Rylyakov, A. V. Electronics Letters, Vol. 47, Issue 18 https://doi.org/10.1049/el.2011.2239	journal	January 2011
110-GHz GaInAs/InP double heterostructure p-i-n photodetectors Journal of Lightwave Technology, Vol. 13, Issue 7 https://doi.org/10.1109/50.400717	journal	July 1995
Analysis of high speed p-i-n photodiode S-parameters by a novel small-signal equivalent circuit model Wang, G.; Tokumitsu, T.; Hanawa, I. IEEE Microwave and Wireless Components Letters, Vol. 12, Issue 10 https://doi.org/10.1109/LMWC.2002.804557	journal	October 2002
Effects of twins on the electronic properties of GaAs Shimamura, Kohei; Yuan, Zaoshi; Shimojo, Fuyuki Applied Physics Letters, Vol. 103, Issue 2 https://doi.org/10.1063/1.4811746	journal	July 2013
Modeling of InGaAs MSM photodetector for circuit-level simulation Xiang, A.; Wohlmuth, W.; Fay, P. Journal of Lightwave Technology, Vol. 14, Issue 5 https://doi.org/10.1109/50.495150	journal	May 1996
Ultrawide-band/high-frequency photodetectors Kato, K. IEEE Transactions on Microwave Theory and Techniques, Vol. 47, Issue 7 https://doi.org/10.1109/22.775466	journal	July 1999
GaAs/AlGaAs Nanowire Photodetector Dai, Xing; Zhang, Sen; Wang, Zilong Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl5006004	journal	April 2014
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth Munshi, A. Mazid; Dheeraj, Dasa L.; Fauske, Vidar T. Nano Letters, Vol. 12, Issue 9 https://doi.org/10.1021/nl3018115	journal	January 2012
Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55-/spl mu/m wavelength Wu, Y. -S.; Shi, J. -W.; Chiu, P. -H. IEEE Photonics Technology Letters, Vol. 18, Issue 8 https://doi.org/10.1109/LPT.2006.873567	journal	April 2006

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A review of III–V nanowire infrared photodetectors and sensors LaPierre, R. R.; Robson, M.; Azizur-Rahman, K. M. Journal of Physics D: Applied Physics, Vol. 50, Issue 12 https://doi.org/10.1088/1361-6463/aa5ab3	journal	February 2017

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