Doping effects in amorphous oxides
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January 2012 |
Generalized Gradient Approximation Made Simple
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October 1996 |
Efficient hybrid density functional calculations in solids: Assessment of the Heyd–Scuseria–Ernzerhof screened Coulomb hybrid functional
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July 2004 |
Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO 2 resistive memory
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February 2013 |
Projector augmented-wave method
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December 1994 |
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
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November 2011 |
Hybrid functionals based on a screened Coulomb potential
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May 2003 |
Computer graphics and graphical user interfaces as tools in simulations of matter at the atomic scale
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October 2003 |
Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
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September 2014 |
Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations
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November 2013 |
Electrical conductivity for warm, dense aluminum plasmas and liquids
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August 2002 |
H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells
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March 2015 |
On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy
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April 2012 |
Nitrogen- and fluorine-doped ZrO 2 : a promising p–n junction for an ultraviolet light-emitting diode
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July 2012 |
First principles study of oxygen vacancy defects in tantalum pentoxide
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November 2003 |
A fast and robust algorithm for Bader decomposition of charge density
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June 2006 |
Electronic structure of δ -Ta 2 O 5 with oxygen vacancy: ab initio calculations and comparison with experiment
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July 2011 |
First principles study of oxygen vacancy migration in tantalum pentoxide
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February 2004 |
Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
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June 2006 |
Ab initiomolecular dynamics for liquid metals
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January 1993 |
Direct Observation of Nitrogen Location in Molecular Beam Epitaxy Grown Nitrogen-Doped ZnO
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February 2006 |
Ab initio study of the optical properties of shocked LiF
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October 2005 |
Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High- $\kappa$ Dielectrics
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May 2007 |
Defect passivation in HfO2 gate oxide by fluorine
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October 2006 |
Defect energy levels in Ta2O5 and nitrogen-doped Ta2O5
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December 2008 |
Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures
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January 2016 |
Improved resistive switching properties by nitrogen doping in tungsten oxide thin films
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May 2015 |
Probing the atomic structure of amorphous Ta2O5 coatings
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January 2011 |
Phase Diagram and Electrical Conductivity of High Energy-Density Water from Density Functional Theory
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July 2006 |
Low power switching of Si-doped Ta 2 O 5 resistive random access memory for high density memory application
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March 2016 |
The Boltzmann Equation in the Theory of Electrical Conduction in Metals
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April 1958 |
How We Found The Missing Memristor
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December 2008 |
Classification of chemical bonds based on topological analysis of electron localization functions
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October 1994 |
Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO2/SiON Gate Stack
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March 2014 |
The missing memristor found
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May 2008 |
Role of atomistic structure in the stochastic nature of conductivity in substoichiometric tantalum pentoxide
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March 2016 |
First-principles study of carbon impurity effects in the pseudo-hexagonal Ta2O5
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June 2016 |
Influence of the porosity of RF sputtered Ta2O5 thin films on their optical properties for electrochromic applications
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December 2003 |
Effects of Mg-Doping on ${\rm HfO}_{2}$-Based ReRAM Device Switching Characteristics
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October 2013 |
Why nitrogen cannot lead to p-type conductivity in ZnO
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December 2009 |
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
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July 1996 |
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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October 1996 |
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
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May 1994 |
Atomistic structural description of the Si(001)/ a -SiO 2 interface: The influence of different Keating-like potential parameters
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June 2011 |
Structural systematics in the binary system Ta2O5–WO3. V. The structure of the low-temperature form of tantalum oxide L-Ta2O5
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May 1971 |
Ab initio simulations of the electrical and optical properties of shock-compressed
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October 2004 |
Electrically inactive nitrogen complex in Si oxynitride
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December 2002 |
Well controlled multiple resistive switching states in the Al local doped HfO 2 resistive random access memory device
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April 2013 |
Role of Hydrogen Ions in TiO 2 -Based Memory Devices
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January 2011 |
Correlations between the mechanical loss and atomic structure of amorphous TiO2-doped Ta2O5 coatings
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February 2013 |
Ring Configurations in a Random Network Model of Vitreous Silica
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March 1967 |
Infra-red absorption of the orthoborate ion
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January 1966 |
Memristor and selector devices fabricated from HfO 2−x N x
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April 2016 |
Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction Problems
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June 1957 |
Hidden Structural Order in Orthorhombic
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June 2013 |
Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering
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October 2008 |