Low-temperature atomic layer deposition of CuSbS2 for thin-film photovoltaics

Riha, Shannon C.; Koegel, Alexandra A.; Emery, Jonathan D.; Pellin, Michael J.; Martinson, Alex B. F.

doi:10.1021/acsami.6b13033

Title: Low-temperature atomic layer deposition of CuSbS₂ for thin-film photovoltaics

Journal Article · Tue Jan 24 00:00:00 EST 2017 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.6b13033· OSTI ID:1356821

^[1]; Koegel, Alexandra A. ^[1];

^[2]; Pellin, Michael J. ^[3];

^[3]

Univ. of Wisconsin-Stevens Point, Stevens Point, WI (United States)
Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

Copper antimony sulfide (CuSbS₂) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (~1.5 eV), large absorption coefficient (>10⁴ cm^–1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS₂ thin films via atomic layer deposition has been developed. After a short (15 min) post process anneal at 225 °C, the ALD-grown CuSbS₂ films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10⁴ cm^–1, as well as a hole concentration of 10¹⁵ cm^–3. Finally, the ALD-grown CuSbS₂ films were paired with ALD-grown TiO₂ to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS₂ PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS₂/CdS heterojunction PV devices. As a result, while far from optimized, this work demonstrates the potential for ALD-grown CuSbS₂ thin films in environmentally benign photovoltaics.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Argonne-Northwestern Solar Energy Research Center (ANSER)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Workforce Development for Teachers and Scientists (WDTS); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC02-06CH11357; SC0001059

OSTI ID:: 1356821

Journal Information:: ACS Applied Materials and Interfaces, Vol. 9, Issue 5; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 43 works

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copper antimony sulfide
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Title: Low-temperature atomic layer deposition of CuSbS2 for thin-film photovoltaics

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