Ultra-Wide-Bandgap Semiconductors for Generation-After-Next Power Electronics.

Conference · Tue Mar 01 00:00:00 EST 2016

OSTI ID:1348132

Kaplar, Robert; Allerman, Andrew A.; Armstrong, Andrew; Crawford, Mary H.; Fischer, Arthur J.; Dickerson, Jeramy Ray; King, Michael Patrick; Baca, Albert G.; Douglas, Erica Ann; Sanchez, Carlos Anthony; Neely, Jason C.; Flicker, Jack David; Zutavern, Fred J.; Mauch, Daniel Lee; Brocato, Robert W.; Rashkin, Lee Joshua; Delhotal, Jarod James; Fang, Lu; Kizilyalli, Isik; Aktas, Ozgur

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1348132
• Report Number(s): SAND2016-2241C; 625637
• Resource Relation: Conference: Proposed for presentation at the Applied Power Electronics Conference held March 20-24, 2016 in Long Beach, California, United States.
• Country of Publication: United States
• Language: English