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Title: neutron-Induced Failures in semiconductor Devices

Technical Report ·
DOI:https://doi.org/10.2172/1346851· OSTI ID:1346851
 [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-06NA25396
OSTI ID:
1346851
Report Number(s):
LA-UR-17-22103
Country of Publication:
United States
Language:
English

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