Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

Park, Kwangwook; Kang, Seokjin; Ravindran, Sooraj; Min, Jung -Wook; Lee, Yong -Tak

doi:10.7567/APEX.10.025801

Title: Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

Journal Article · Mon Jan 16 00:00:00 EST 2017 · Applied Physics Express

DOI:https://doi.org/10.7567/APEX.10.025801· OSTI ID:1345117

Park, Kwangwook ^[1]; Kang, Seokjin ^[2]; Ravindran, Sooraj ^[3]; Min, Jung -Wook ^[2]; Lee, Yong -Tak ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Gwangju Institute of Science and Technology, Gwangju (Republic of Korea)
Indian Institute of Space and Technology, Trivandrum (India)

Here, we report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the V/III ratio decreases. However, a high V/III ratio leads to an abrupt interface, increasing the parasitic potential because of the phosphorus-amount-dependent diffusion of group-III atoms during growth. These results suggest that the V/III ratio is an important parameter that must be wisely chosen in designing optoelectronic devices incorporating LCM structure.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1345117

Report Number(s):: NREL/JA-5K00-68032

Journal Information:: Applied Physics Express, Vol. 10, Issue 2; ISSN 1882-0778

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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Title: Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

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