High-quality EuO thin films the easy way via topotactic transformation

Mairoser, Thomas; Mundy, Julia A.; Melville, Alexander; Hodash, Daniel; Cueva, Paul; Held, Rainer; Glavic, Artur; Schubert, Jürgen; Muller, David A.; Schlom, Darrell G.; Schmehl, Andreas

doi:10.1038/ncomms8716

Title: High-quality EuO thin films the easy way via topotactic transformation

Journal Article · Thu Jul 16 00:00:00 EDT 2015 · Nature Communications

DOI:https://doi.org/10.1038/ncomms8716· OSTI ID:1259679

Mairoser, Thomas ^[1];

^[2]; Melville, Alexander ^[3]; Hodash, Daniel ^[3]; Cueva, Paul ^[2]; Held, Rainer ^[3];

^[4];

^[5]; Muller, David A. ^[6]; Schlom, Darrell G. ^[7]; Schmehl, Andreas ^[8]

Univ. Augsburg, Augsburg (Germany). Center for Electronic Correlations and Magnetism
Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics
Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division
Peter Grunberg Institute, Julich (Germany). JARA-FIT, Research Centre
Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY (United States)
Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY (United States)
Univ. Augsburg, Augsburg (Germany). Center for Electronic Correlations and Magnetism

Epitaxy is widely employed to create highly oriented crystalline films. A less appreciated, but nonetheless powerful means of creating such films is via topotactic transformation, in which a chemical reaction transforms a single crystal of one phase into a single crystal of a different phase, which inherits its orientation from the original crystal. Topotactic reactions may be applied to epitactic films to substitute, add or remove ions to yield epitactic films of different phases. Here we exploit a topotactic reduction reaction to provide a non-ultra-high vacuum (UHV) means of growing highly oriented single crystalline thin films of the easily over-oxidized half-metallic semiconductor europium monoxide (EuO) with a perfection rivalling that of the best films of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition. Lastly, as the technique only requires high-vacuum deposition equipment, it has the potential to drastically improve the accessibility of high-quality single crystalline films of EuO as well as other difficult-to-synthesize compounds.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002334; DMR-1120296; FA9550-10-1-0123

OSTI ID:: 1259679

Journal Information:: Nature Communications, Vol. 6; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 39 works

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References (49)

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Large positive linear magnetoresistance in the two-dimensional t 2g electron gas at the EuO/SrTiO3 interface Kormondy, Kristy J.; Gao, Lingyuan; Li, Xiang Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-26017-z	journal	May 2018
Thermodynamic stability and control of oxygen reactivity at functional oxide interfaces: EuO on ITO Gerber, Timm; Lömker, Patrick; Zijlstra, Bernardus Journal of Materials Chemistry C, Vol. 4, Issue 9 https://doi.org/10.1039/c6tc00170j	journal	January 2016
EurOgels: A ferromagnetic semiconductor with a porous structure prepared via the assembly of hybrid nanorods Trepka, Bastian; Stiegeler, Julian; Wimmer, Ilona Nanoscale, Vol. 10, Issue 41 https://doi.org/10.1039/c8nr06536e	journal	January 2018
EuO epitaxy by oxygen scavenging on SrTiO ₃ (001): Effect of SrTiO ₃ thickness and temperature Guo, Wei; Posadas, Agham B.; Lu, Sirong Journal of Applied Physics, Vol. 124, Issue 23 https://doi.org/10.1063/1.5059560	journal	December 2018
Fine structure of metal–insulator transition in EuO resolved by doping engineering Averyanov, Dmitry V.; Parfenov, Oleg E.; Tokmachev, Andrey M. Nanotechnology, Vol. 29, Issue 19 https://doi.org/10.1088/1361-6528/aab16e	journal	March 2018
Strain-Induced Increase of Dielectric Constant in EuO Thin Film Kashir, Alireza; Jeong, Hyeon-Woo; Jung, Woochan Materials Research Express, Vol. 6, Issue 10 https://doi.org/10.1088/2053-1591/ab405a	journal	September 2019
Large electronic wave function extension of the oxygen vacancies on EuO _1−x surface Wang, Aaron; Rimal, Gaurab; Dahnovsky, Yuri Materials Research Express, Vol. 6, Issue 11 https://doi.org/10.1088/2053-1591/ab44ef	journal	September 2019
Thermodynamic stability and control of oxygen reactivity at functional oxide interfaces: EuO on ITO Gerber, Timm; Lömker, Patrick; Zijlstra, Bernardus Deutsches Elektronen-Synchrotron, DESY, Hamburg https://doi.org/10.3204/pubdb-2016-05969	text	January 2016

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