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Title: Design and testing of the first 2D Prototype Vertically Integrated Pattern Recognition Associative Memory

Journal Article · · Journal of Instrumentation

An associative memory-based track finding approach has been proposed for a Level 1 tracking trigger to cope with increasing luminosities at the LHC. The associative memory uses a massively parallel architecture to tackle the intrinsically complex combinatorics of track finding algorithms, thus avoiding the typical power law dependence of execution time on occupancy and solving the pattern recognition in times roughly proportional to the number of hits. This is of crucial importance given the large occupancies typical of hadronic collisions. The design of an associative memory system capable of dealing with the complexity of HL-LHC collisions and with the short latency required by Level 1 triggering poses significant, as yet unsolved, technical challenges. For this reason, an aggressive R&D program has been launched at Fermilab to advance state of-the-art associative memory technology, the so called VIPRAM (Vertically Integrated Pattern Recognition Associative Memory) project. The VIPRAM leverages emerging 3D vertical integration technology to build faster and denser Associative Memory devices. The first step is to implement in conventional VLSI the associative memory building blocks that can be used in 3D stacking, in other words, the building blocks are laid out as if it is a 3D design. In this paper, we report on the first successful implementation of a 2D VIPRAM demonstrator chip (protoVIPRAM00). The results show that these building blocks are ready for 3D stacking.

Research Organization:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP)
DOE Contract Number:
AC02-07CH11359
OSTI ID:
1252997
Report Number(s):
FERMILAB-PUB-14-478-E-PPD; 1345306
Journal Information:
Journal of Instrumentation, Vol. 10, Issue 02; ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English