Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions
Journal Article
·
· IEEE Transactions on Nuclear Science
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1239150
- Report Number(s):
- SAND-2015-8735J; 615276
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 62, Issue 6; ISSN 0018-9499
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 2 works
Citation information provided by
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