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Title: The influence of hold time on the onset of plastic deformation in silicon

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4938480· OSTI ID:1237634
 [1];  [2];  [3];  [3]
  1. Australian National Univ., Canberra (Australia)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Australian National Univ. Canberra (Australia)

Here, the formation of silicon (Si) in its -Sn form is known to be nucleation limited, with an undetermined period of time between when critical pressure for the trans- formation is reached and when the transformation actually occurs. In this letter, we use nanoindentation to apply critical pressure to diamond cubic Si and hold the sample under pressure to promote deformation via phase transformation and crystalline defects. We report that the number of indents in which phase transformation is observed increases with increasing hold time. Interestingly, the number of indents in which crystalline defects are observed also increase with increasing hold time, suggesting crystalline defects are also nucleation limited. Raman spectroscopy and cross-sectional transmission electron microscopy is used to show that these two deformation mechanisms are mutually exclusive under the indentation conditions used within this letter.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1237634
Journal Information:
Journal of Applied Physics, Vol. 118, Issue 24; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 20 works
Citation information provided by
Web of Science

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