Correlating optical damage threshold with intrinsic defect populations in fused silica as a function of heat treatment temperature

Shen, N.; Matthews, M. J.; Elhadj, S.; Miller, P. E.; Nelson, A. J.; Hamilton, J.

doi:10.1088/0022-3727/46/16/165305

Title: Correlating optical damage threshold with intrinsic defect populations in fused silica as a function of heat treatment temperature

Journal Article · Wed Apr 03 00:00:00 EDT 2013 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/0022-3727/46/16/165305· OSTI ID:1226936

Shen, N. ^[1]; Matthews, M. J. ^[1]; Elhadj, S. ^[1]; Miller, P. E. ^[1]; Nelson, A. J. ^[1]; Hamilton, J. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Here, chemical vapor deposition (CVD) is used for the production of fused silica optics in high-power laser applications. However, relatively little is known about the ultraviolet laser damage threshold of CVD films and how they relate to intrinsic defects produced during deposition. We present here a study relating structural and electronic defects in CVD films to 355 nm pulsed-laser damage threshold as a function of post-deposition annealing temperature (T_HT). Plasma-enhanced CVD based on SiH₄/N₂O under oxygen-rich conditions was used to deposit 1.5, 3.1 and 6.4 µm thick films on etched SiO2 substrates. Rapid annealing was performed using a scanned CO2 laser beam up to T_HT ~ 2100 K. The films were then characterized using x-ray photoemission spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy. A gradual transition in the damage threshold of annealed films was observed for T_HT values up to 1600 K, correlating with a decrease in non-bridging silanol and oxygen deficient centres. An additional sharp transition in damage threshold also occurs at ~1850 K indicating substrate annealing. Based on our results, a mechanism for damage-related defect annealing is proposed, and the potential of using high-T_HT CVD SiO₂ to mitigate optical damage is also discussed.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC52-07NA27344

OSTI ID:: 1226936

Report Number(s):: LLNL-JRNL-604132

Journal Information:: Journal of Physics. D, Applied Physics, Vol. 46, Issue 16; ISSN 0022-3727

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

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