Growth process for gallium nitride porous nanorods

Wildeson, Isaac Harshman; Sands, Timothy David

Title: Growth process for gallium nitride porous nanorods

Patent · Tue Mar 24 00:00:00 EDT 2015

OSTI ID:1174203

Wildeson, Isaac Harshman; Sands, Timothy David

A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

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Research Organization:: Purdue Univ., West Lafayette, IN (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-06NT42862

Assignee:: Purdue Research Foundation (West Lafayette, IN)

Patent Number(s):: 8,986,835

Application Number:: 13/080,165

OSTI ID:: 1174203

Resource Relation:: Patent File Date: 2011 Apr 05

Country of Publication:: United States

Language:: English

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