Leakage current reduction via scallop-free Bosch process for high aspect ratio Si p-i-n diodes
Journal Article
·
· IEEE Electronic Device Letters, vol. 34, no. 10, October 1, 2013, pp. 1226-1228
OSTI ID:1113358
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 1113358
- Report Number(s):
- LLNL-JRNL-639056
- Journal Information:
- IEEE Electronic Device Letters, vol. 34, no. 10, October 1, 2013, pp. 1226-1228, Journal Name: IEEE Electronic Device Letters, vol. 34, no. 10, October 1, 2013, pp. 1226-1228
- Country of Publication:
- United States
- Language:
- English
Similar Records
Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts
Modeling dislocation-related leakage currents in GaN p-n diodes
Characterization of reverse leakage components for ultrashallow p{sup +}/n diodes fabricated using gas immersion laser doping
Journal Article
·
Thu Mar 05 00:00:00 EST 2009
· Journal of Vacuum Science and Technology B, vol. 28, no. 5, August 20, 2010, pp. 916
·
OSTI ID:1113358
+5 more
Modeling dislocation-related leakage currents in GaN p-n diodes
Journal Article
·
Mon Dec 30 00:00:00 EST 2019
· Journal of Applied Physics
·
OSTI ID:1113358
+1 more
Characterization of reverse leakage components for ultrashallow p{sup +}/n diodes fabricated using gas immersion laser doping
Journal Article
·
Tue Oct 01 00:00:00 EDT 1996
· IEEE Electron Device Letters
·
OSTI ID:1113358
+1 more