Metal deposition using seed layers

Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

Title: Metal deposition using seed layers

Patent · Tue Nov 12 00:00:00 EST 2013

OSTI ID:1108012

Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-08ER46516

Assignee:: Massachusetts Institute of Technology (Cambridge, MA); The Trustees of Boston College (Chestnutt Hill, MA); GMZ Energy, Inc. (Waltham, MA)

Patent Number(s):: 8,580,100

Application Number:: 12/932,372

OSTI ID:: 1108012

Country of Publication:: United States

Language:: English

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