CEBAF 200 kV Inverted Electron Gun

Conference · Tue Mar 01 00:00:00 EST 2011

OSTI ID:1020746

Grames, J M; Clark, J; Hansknecht, J; Poelker, M; Stutzman, M L; Suleiman, R; Surles-Law, K.E.L.; BastaniNejad, M; McCarter, J J

Two DC high volt­age GaAs pho­to­guns have been built at Jef­fer­son Lab based on a com­pact in­vert­ed in­su­la­tor de­sign. One pho­to­gun pro­vides the po­lar­ized elec­tron beam at CEBAF and op­er­ates at 130 kV bias volt­age. The other gun is used for high av­er­age cur­rent life­time stud­ies at a ded­i­cat­ed test fa­cil­i­ty and has been op­er­at­ed at bias volt­age up to 225 kV. The ad­van­tages of high­er DC volt­age for CEBAF in­clude re­duced space-charge emit­tance growth and the po­ten­tial for pro­longed pho­to­cath­ode life­time. How­ev­er, a con­se­quence of op­er­at­ing at high­er volt­ages is the in­creased like­li­hood of field emis­sion or break­down, both of which are un­ac­cept­able. High­lights of the R&D stud­ies lead­ing to­ward a pro­duc­tion 200keV GaAs pho­to­gun for CEBAF will be pre­sent­ed.

• Research Organization: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC05-06OR23177
• OSTI ID: 1020746
• Report Number(s): JLAB-ACC-11-1381; DOE/OR/23177-1609; TRN: US1103778
• Resource Relation: Conference: PAC 2011, New York, NY, 28 Mar - 1 Apr 2011
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ACCELERATORS
ELECTRON GUNS
SPACE CHARGE