Electron microscopy of AlN-SiC interfaces and solid solutions
- Oak Ridge National Lab., TN (United States)
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
In a 2H AlN-SiC solid solution grown by MBE on {alpha}(6H)-SiC (3{degrees} from [0001]), the epilayer contained a high density of basal faults related to {approximately}5 nm steps on the growth surface: no compositional inhomogeneity was detected by PEELS. In diffusion couples of polycrystalline, sintered AlN on SiC annealed at 1600 and 1700{degrees}C. 8H sialon [nominally (AlN){sub 2}Al{sub 2}O{sub 3}] formed at the interface of SiC and recrystallized epitactic AlN grains, and Si{sub 3}N{sub 4}-rich {beta}{prime} sialon particles formed in the SiC. No interdiffusion was detected by PEELS in diffusion couples of MBE-grown AlN on SiC annealed at 1700 and 1850{degrees}C. Irregular epilayer thickness explains companion Auger depth profile results.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400; AC05-76OR00033
- OSTI ID:
- 10192960
- Report Number(s):
- CONF-930956-1; ON: DE94002449
- Resource Relation:
- Conference: Biennial conference of the Electron Microscopy and Analysis Group of the Institute of Physics: recent advances in electron microscopy and related microanalytical techniques,Liverpool (United Kingdom),14-17 Sep 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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