Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

Conference · Thu Sep 01 00:00:00 EDT 1994

OSTI ID:10181277

Schwarze, G E ^[1]; Frasca, A J ^[2]

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1. Lewis Research Center, Cleveland, OH (United States)
2. Wittenberg Univ., Springfield, OH (United States)

The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10{sup 13} n/cm {sup 2} and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
• Sponsoring Organization: National Aeronautics and Space Administration, Washington, DC (United States); USDOE, Washington, DC (United States)
• DOE Contract Number: AI03-86SF16310
• OSTI ID: 10181277
• Report Number(s): NASA-TM-105248; AIAA-91-3525; CONF-9109226-27; ON: DE94051220; TRN: 94:008312
• Resource Relation: Conference: AIAA/NASA/OAI conference on advanced space exploration initiative (SEI) technologies,Cleveland, OH (United States),3-4 Sep 1991; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
IRRADIATION
ANNEALING
SEMICONDUCTOR SWITCHES
SPACE POWER REACTORS
REACTOR INSTRUMENTATION
NESDPS Office of Nuclear Energy Space and Defense Power Systems
210600
440200
POWER REACTORS, MOBILE, PROPULSION, PACKAGE, AND TRANSPORTABLE
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS