Method of doping organic semiconductors
- Constance, DE
- Summit, NJ
- New Providence, NJ
An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.
- Research Organization:
- Alcatel-Lucent USA Inc. (Murray Hill, NJ) The Trustees of Columbia University (New York, NY)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-04ER46118
- Assignee:
- Alcatel-Lucent USA Inc. (Murray Hill, NJ) The Trustees of Columbia University (New York, NY)
- Patent Number(s):
- 7,821,000
- Application Number:
- 12/024,484
- OSTI ID:
- 1015984
- Country of Publication:
- United States
- Language:
- English
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