Thick film fabrication of aluminum nitride microcircuits. Final report

Technical Report · Tue Mar 01 00:00:00 EST 1994

DOI:https://doi.org/10.2172/10143124· OSTI ID:10143124

Perdieu, L H

A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

• Research Organization: Allied-Signal Aerospace Co., Kansas City, MO (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00613
• OSTI ID: 10143124
• Report Number(s): KCP-613-5283; ON: DE94010107; TRN: AHC29409%%78
• Resource Relation: Other Information: PBD: Mar 1994
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
RESEARCH PROGRAMS
MICROELECTRONIC CIRCUITS
FABRICATION
PROGRESS REPORT
ALUMINIUM OXIDES
PERFORMANCE
THERMAL CONDUCTIVITY
THERMAL EXPANSION
TECHNOLOGY TRANSFER
INKS
426000
360200
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
CERAMICS, CERMETS, AND REFRACTORIES