Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report

Technical Report · Tue Mar 01 00:00:00 EST 1994

DOI:https://doi.org/10.2172/10132455· OSTI ID:10132455

Hoffman, D M ^[1]

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1. Univ. of Houston, TX (United States). Dept. of Chemistry

The author recently reported that dialkylamido complexes are promising precursors to nitride thin films. On this basis it was reasoned that transition metal and main group disilazide complexes in which the silicon has dialkylamido substituents are potential precursors to ternary silicon nitride films. Bulky disilazide ligands are known to stabilize main group and transition metal complexes with low coordination numbers. Reaction of dimethylamine with Cl{sub 3}SiN(H)SiMe{sub 3} in hexane solution at 25{degrees}C gave the bulky disilazane [(Me{sub 2}N){sub 3}Si]N(h)SiMe{sub 3} (1) in 73% yield. Reaction of (1) with n-butyl lithium in benzene at 0{degrees}C produced [(Me{sub 2}N){sub 3}Si]N(Li)SiMe{sub 3} in 82% yield. LiN[Si(NMe{sub 2}){sub 3}]{sub 2} was chemically prepared in 92% yield and was converted to the amine with 83% yield. The author examined the use of amido precursors for main group oxide thin films. Sn(NMe{sub 2}){sub 4} and Si(NMe{sub 2}){sub 4} react with oxygen in an atmospheric pressure chemical vapor deposition reactor to give SnO{sub 2} and SiO{sub 2} films, respectively. The films were deposited on quartz, silicon, and glass at substrate temperatures of 250--400 {degrees}C. The results of the characterizations of the films and compounds are presented in this report.

• Research Organization: Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Houston Univ., TX (United States). Dept. of Chemistry
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 10132455
• Report Number(s): LA-SUB-94-41; ON: DE94008096; TRN: 94:003539
• Resource Relation: Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SILICON NITRIDES
CHEMICAL VAPOR DEPOSITION
TIN OXIDES
SILICON OXIDES
THIN FILMS
STRUCTURAL CHEMICAL ANALYSIS
PRECURSOR
PROGRESS REPORT
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
360201
400201
360202
PREPARATION AND FABRICATION
CHEMICAL AND PHYSICOCHEMICAL PROPERTIES
STRUCTURE AND PHASE STUDIES