Swords to plowshares: Shock wave applications to advanced lithography
Extreme UltraViolet Lithography (EUVL) seeks to apply radiation in a wavelength region centered near 13 nm to produce microcircuits having features sizes 0.1 micron or less. A critical requirement for the commercial application of this technology is the development of an economical, compact source of this radiation which is suitable for lithographic applications. A good candidate is a laser-plasma source, which is generated by the interaction of an intermediate intensity laser pulse (up to 10{sup 12} W/cm{sup 2}) with a metallic target. While such a source has radiative characteristics which satisfy the needs of an EUVL source, the debris generated during the laser-target interaction strikes at the economy of the source. Here, the authors review the use of concepts and computer modeling, originally developed for hypervelocity impact analysis, to study this problem.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10123450
- Report Number(s):
- SAND-95-0307C; CONF-9410131-12; ON: DE95008154; BR: GB0103012; TRN: AHC29509%%196
- Resource Relation:
- Conference: 1994 hypervelocity impact symposium,Santa Fe, NM (United States),16-20 Oct 1994; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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