Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; Kucheyev, S. O.

doi:10.1038/srep30931

Title: Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

Journal Article · Wed Aug 03 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep30931· OSTI ID:1297652

Bayu Aji, L. B. ^[1]; Wallace, J. B. ^[2]; Shao, L. ^[3]; Kucheyev, S. O. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A&M Univ., College Station, TX (United States)
Texas A&M Univ., College Station, TX (United States)

Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1297652

Report Number(s):: LLNL-JRNL-677429; TRN: US1601834

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 17 works

Citation information provided by
Web of Science

References (35)

Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals Inui, H.; Mori, H.; Suzuki, A. Philosophical Magazine B, Vol. 65, Issue 1 https://doi.org/10.1080/13642819208223042	journal	January 1992
Ionization-induced annealing of pre-existing defects in silicon carbide Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9049	journal	August 2015
Positron annihilation investigation of electron irradiation-produced defects in 6H-SiC Dannefaer, S.; Kerr, D. Diamond and Related Materials, Vol. 13, Issue 1 https://doi.org/10.1016/j.diamond.2003.10.027	journal	January 2004
Ion implantation of silicon carbide Hallén, A.; Janson, M. S.; Kuznetsov, A. Yu Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 186, Issue 1-4 https://doi.org/10.1016/S0168-583X(01)00880-1	journal	January 2002
Radiation defect dynamics in Si at room temperature studied by pulsed ion beams Wallace, J. B.; Charnvanichborikarn, S.; Bayu Aji, L. B. Journal of Applied Physics, Vol. 118, Issue 13 https://doi.org/10.1063/1.4932209	journal	October 2015
Handbook of SiC properties for fuel performance modeling Snead, Lance L.; Nozawa, Takashi; Katoh, Yutai Journal of Nuclear Materials, Vol. 371, Issue 1-3 https://doi.org/10.1016/j.jnucmat.2007.05.016	journal	September 2007
Some new aspects for the evaluation of disorder profiles in silicon by backscattering Schmid, K. Radiation Effects, Vol. 17, Issue 3-4 https://doi.org/10.1080/00337577308232616	journal	January 1973
Atomic scale simulation of defect production in irradiated 3C-SiC Devanathan, R.; Weber, W. J.; Gao, F. Journal of Applied Physics, Vol. 90, Issue 5 https://doi.org/10.1063/1.1389523	journal	September 2001
Ab initio based rate theory model of radiation induced amorphization in β-SiC Swaminathan, Narasimhan; Morgan, Dane; Szlufarska, Izabela Journal of Nuclear Materials, Vol. 414, Issue 3 https://doi.org/10.1016/j.jnucmat.2011.05.024	journal	July 2011
Radiation-induced amorphization and swelling in ceramics Matsunaga, A.; Kinoshita, C.; Nakai, K. Journal of Nuclear Materials, Vol. 179-181 https://doi.org/10.1016/0022-3115(91)90123-O	journal	March 1991
Crystalline-to-amorphous transition for Si-ion irradiation of Si(100) Schultz, Peter J.; Jagadish, C.; Ridgway, M. C. Physical Review B, Vol. 44, Issue 16 https://doi.org/10.1103/PhysRevB.44.9118	journal	October 1991
Defect annealing kinetics in irradiated 6H–SiC Weber, W. J.; Jiang, W.; Thevuthasan, S. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 166-167 https://doi.org/10.1016/S0168-583X(99)00868-X	journal	May 2000
Electron-irradiation-induced crystalline to amorphous transition in α-Sic single crystals Inui, H.; Mori, H.; Fujita, H. Philosophical Magazine B, Vol. 61, Issue 1 https://doi.org/10.1080/13642819008208655	journal	January 1990
Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated $6 H − Si C$ Jiang, W.; Zhang, Y.; Weber, W. J. Physical Review B, Vol. 70, Issue 16 https://doi.org/10.1103/PhysRevB.70.165208	journal	October 2004
Single-photon emitting diode in silicon carbide Lohrmann, A.; Iwamoto, N.; Bodrog, Z. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms8783	journal	July 2015
Pulsed ion beam measurement of defect diffusion lengths in irradiated solids Charnvanichborikarn, S.; Myers, M. T.; Shao, L. Journal of Physics: Condensed Matter, Vol. 25, Issue 16 https://doi.org/10.1088/0953-8984/25/16/162203	journal	March 2013
Structure and properties of ion-beam-modified (6H) silicon carbide Weber, W. J.; Wang, L. M.; Yu, N. Materials Science and Engineering: A, Vol. 253, Issue 1-2 https://doi.org/10.1016/S0921-5093(98)00710-2	journal	September 1998
Influence of irradiation spectrum and implanted ions on the amorphization of ceramics Zinkle, S. J.; Snead, L. L. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 116, Issue 1-4 https://doi.org/10.1016/0168-583X(96)00016-X	journal	August 1996
An EPR study of defects induced in 6H-SiC by ion implantation Barklie, R. C.; Collins, M.; Holm, B. Journal of Electronic Materials, Vol. 26, Issue 3 https://doi.org/10.1007/s11664-997-0140-6	journal	March 1997
Temperature dependence of damage formation in Ag ion irradiated 4H-SiC Wendler, E.; Bierschenk, Th.; Wesch, W. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 19 https://doi.org/10.1016/j.nimb.2010.05.026	journal	October 2010
SRIM – The stopping and range of ions in matter (2010) Ziegler, James F.; Ziegler, M. D.; Biersack, J. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091	journal	June 2010
Photoluminescence of radiation induced defects in 3C‐SiC epitaxially grown on Si Itoh, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu Journal of Applied Physics, Vol. 77, Issue 2 https://doi.org/10.1063/1.359008	journal	January 1995
Dynamic annealing in ion implanted SiC: Flux versus temperature dependence Kuznetsov, A. Yu.; Wong-Leung, J.; Hallén, A. Journal of Applied Physics, Vol. 94, Issue 11 https://doi.org/10.1063/1.1622797	journal	December 2003
Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC Zhang, Y.; Weber, W. J.; Jiang, W. Journal of Applied Physics, Vol. 93, Issue 4 https://doi.org/10.1063/1.1537451	journal	February 2003
Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide Jamison, Laura; Sridharan, Kumar; Shannon, Steve Journal of Materials Research, Vol. 29, Issue 23 https://doi.org/10.1557/jmr.2014.340	journal	December 2014
A model for the formation of amorphous Si by ion bombardment Morehead, F. F.; Crowder, B. L. Radiation Effects, Vol. 6, Issue 1 https://doi.org/10.1080/00337577008235042	journal	January 1970
Electron spin resonance in electron‐irradiated 3C‐SiC Itoh, Hisayoshi; Hayakawa, Naohiro; Nashiyama, Isamu Journal of Applied Physics, Vol. 66, Issue 9 https://doi.org/10.1063/1.343920	journal	November 1989
Irradiation-induced atomic defects in SiC studied by positron annihilation Rempel, A. A.; Schaefer, H. -E. Applied Physics A Materials Science & Processing, Vol. 61, Issue 1 https://doi.org/10.1007/BF01538210	journal	July 1995
Time constant of defect relaxation in ion-irradiated 3C-SiC Wallace, J. B.; Bayu Aji, L. B.; Shao, L. Applied Physics Letters, Vol. 106, Issue 20 https://doi.org/10.1063/1.4921471	journal	May 2015
Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures Wallace, J. B.; Bayu Aji, L. B.; Li, T. T. Journal of Applied Physics, Vol. 118, Issue 10 https://doi.org/10.1063/1.4929953	journal	September 2015
Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC Slotte, J.; Saarinen, K.; Janson, M. S. Journal of Applied Physics, Vol. 97, Issue 3 https://doi.org/10.1063/1.1844618	journal	February 2005
Defect accumulation during room temperature N+ irradiation of silicon Titov, A. I.; Carter, G. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 119, Issue 4 https://doi.org/10.1016/S0168-583X(96)00353-9	journal	December 1996
Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory Titov, A. I.; Belyakov, V. S.; Azarov, A. Yu. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212 https://doi.org/10.1016/S0168-583X(03)01486-1	journal	December 2003
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties Fissel, A. Physics Reports, Vol. 379, Issue 3-4, p. 149-255 https://doi.org/10.1016/s0370-1573(02)00632-4	journal	May 2003
Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si Myers, M. T.; Charnvanichborikarn, S.; Shao, L. Physical Review Letters, Vol. 109, Issue 9 https://doi.org/10.1103/physrevlett.109.095502	journal	August 2012

Cited By (4)

Impact of pre-existing disorder on radiation defect dynamics in Si Wallace, J. B.; Bayu Aji, L. B.; Shao, L. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-48415-7	journal	August 2019
Radiation defect dynamics in GaAs studied by pulsed ion beams Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O. Journal of Applied Physics, Vol. 124, Issue 2 https://doi.org/10.1063/1.5038018	journal	July 2018
Dynamic annealing in Ge studied by pulsed ion beams Wallace, J. B.; Bayu Aji, L. B.; Shao, L. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-13161-1	journal	October 2017
Effects of collision cascade density on radiation defect dynamics in 3C-SiC Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep44703	journal	March 2017

Similar Records

Radiation defect dynamics in GaAs studied by pulsed ion beams

Journal Article · Sat Jul 14 00:00:00 EDT 2018 · Journal of Applied Physics · OSTI ID:1297652

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Journal Article · Fri Mar 17 00:00:00 EDT 2017 · Scientific Reports · OSTI ID:1297652

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

Phosphorus implantation into 4H-silicon carbide

Journal Article · Tue Feb 01 00:00:00 EST 2000 · Journal of Electronic Materials · OSTI ID:1297652

Capano, M A; Santhakumar, R; Venugopal, R; +2 more

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Title: Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

Citation Formats

References (35)

Cited By (4)

Similar Records

Related Subjects