Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates
- Brookhaven National Lab. (BNL), Upton, NY (United States)
We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm-3 carrier density, and ~0.1 cm2 V-1 s-1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704; SC0012704
- OSTI ID:
- 1236555
- Alternate ID(s):
- OSTI ID: 1226190
- Report Number(s):
- BNL-111764-2016-JA; R&D Project: 16065/16074; KC0403020
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 20; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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