Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

Journal Article · Mon Nov 16 04:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935793· OSTI ID:22486097

Nam, Chang-Yong; Stein, Aaron; Kisslinger, Kim; Black, Charles T. ^[1]

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1. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ∼10{sup 19 }cm{sup −3} carrier density, and ∼0.1 cm{sup 2} V{sup −1} s{sup −1} electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.

• OSTI ID: 22486097
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CARRIER DENSITY
CRYSTALS
ELECTRON MOBILITY
ELECTRONIC EQUIPMENT
FIELD EFFECT TRANSISTORS
MATRICES
METALS
NANOSTRUCTURES
OXYGEN
PLASMA
POLYMERS
TRANSMISSION ELECTRON MICROSCOPY
WATER VAPOR
ZINC OXIDES