Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films

Klein, C.; Vollmers, N. J.; Gerstmann, U.; Zahl, P.; Lukermann, D.; Jnawali, G.; Pfnur, H.; Sutter, P.; Tegenkamp, C.; Schmidt, W. G.; Horn-von Hoegen, M.

doi:10.1103/PhysRevB.91.195441

Title: Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films

Journal Article · Wed May 27 00:00:00 EDT 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.91.195441· OSTI ID:1214097

Klein, C. ^[1]; Vollmers, N. J. ^[2]; Gerstmann, U. ^[2]; Zahl, P. ^[3]; Lukermann, D. ^[3]; Jnawali, G. ^[1]; Pfnur, H. ^[4]; Sutter, P. ^[3]; Tegenkamp, C. ^[4]; Schmidt, W. G. ^[2]; Horn-von Hoegen, M. ^[1]

Univ. Duisburg-Essen, Duisburg (Germany)
Univ. Paderborn, Paderborn (Germany)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Univ. Hannover, Hannover (Germany)

By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. Thus, it allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704; AC02-98CH10886

OSTI ID:: 1214097

Alternate ID(s):: OSTI ID: 1183227

Report Number(s):: BNL-108267-2015-JA; PRBMDO; KC0403020

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 91, Issue 19; ISSN 1098-0121

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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Controlling conductivity by quantum well states in ultrathin Bi(111) films Kröger, P.; Abdelbarey, D.; Siemens, M. Physical Review B, Vol. 97, Issue 4 https://doi.org/10.1103/physrevb.97.045403	journal	January 2018
Quantum transport in the surface states of epitaxial Bi(111) thin films Zhu, Kai; Wu, Lin; Gong, Xinxin Physical Review B, Vol. 94, Issue 12 https://doi.org/10.1103/physrevb.94.121401	journal	September 2016
Controlling conductivity by quantum well states in ultrathin Bi(111) films Kröger, P.; Abdelbarey, D.; Siemens, M. College Park, MD : American Physical Society https://doi.org/10.15488/2775	other	January 2018

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