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Title: Wet-chemical systems and methods for producing black silicon substrates

Patent ·
OSTI ID:1179804
; ;

A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
9,034,216
Application Number:
13/825,541
OSTI ID:
1179804
Country of Publication:
United States
Language:
English

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  • Kumaravelu, G.; Alkaisi, M. M.; Bittar, A.
  • Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. https://doi.org/10.1109/PVSC.2002.1190507
conference January 2002

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