Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials
Incorporation of Se into Cd1–xZnxTe (CZT) to form the quaternary compound semiconductor Cd1–xZnxTe1–ySey (CZTS) has proven to be an effective solution for compensating the major flaws associated with CZT, including poor homogeneity and high concentrations of electronically active deep levels that limit the performance of CZT detectors. In order to investigate how deep levels are affected by the Se concentration in CZTS, we performed photoinduced current transient spectroscopy (PICTS) measurements on CZTS crystals grown by the traveling heater method (THM) with 10% atomic Zn and varying atomic percentage of Se from 1.5% to 7.0%. The PICTS scans for up tomore »