Frequency dependent plasma characteristics in a capacitively coupled 300 mm wafer plasma processing chamber.

Journal Article · Sun Jan 01 00:00:00 EST 2006 · Proposed for publication in Plasma Sources Science and Technology.

DOI:https://doi.org/10.1088/0963-0252/15/4/035· OSTI ID:951687

Hebner, Gregory Albert; Holland, J P ^[1]; Paterson, A M ^[1]; Barnat, Edward V; Miller, Paul Albert

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1. Applied Materials, Sunnyvale, CA

Argon plasma characteristics in a dual-frequency, capacitively coupled, 300 mm-wafer plasma processing system were investigated for rf drive frequencies between 10 and 190 MHz. We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion saturation current, optical emission and argon metastable density. For the conditions investigated, the line-integrated electron density was a nonlinear function of drive frequency at constant rf power. In addition, the spatial distribution of the positive ions changed from uniform to peaked in the centre as the frequency was increased. Spatially resolved optical emission increased with frequency and the relative optical emission at several spectral lines depended on frequency. Argon metastable density and spatial distribution were not a strong function of drive frequency. Metastable temperature was approximately 400 K.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 951687
• Report Number(s): SAND2006-0574J; TRN: US0902292
• Journal Information: Proposed for publication in Plasma Sources Science and Technology., Journal Name: Proposed for publication in Plasma Sources Science and Technology.
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ARGON
ELECTRON DENSITY
PLASMA
SPATIAL DISTRIBUTION
FREQUENCY DEPENDENCE
RF SYSTEMS
SPACE DEPENDENCE