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Title: Effect of Growth Temperature on the Magnetic, Microwave, and Cation Inversion Properties on NiFe2O4 Thin Films Deposited by Pulsed Laser Ablation Deposition

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2714204· OSTI ID:930513

First principles band structure calculations suggest that the preferential occupation of Ni{sup 2+} ions on the tetrahedral sites in NiFe{sub 2}O{sub 4} would lead to an enhancement of the exchange integral and subsequently the Neel temperature and magnetization. To this end, we have deposited NiFe{sub 2}O{sub 4} films on MgO substrates by pulsed laser deposition. The substrate temperature was varied from 700 to 900 {sup o}C at 5 mTorr of O2 pressure. The films were annealed at 1000 {sup o}C for different times prior to their characterization. X-ray diffraction spectra showed either (100) or (111) orientation with the spinel structure dependent on the substrate orientation. Magnetic studies showed a magnetization value of 2.7 kG at 300 K. The magnetic moment was increased to the bulk value as a result of postdeposition annealing at 1000 {sup o}C. The as produced films show that the ferromagnetic resonance linewidth at 9.61 GHz was 1.5 kOe, and it was reduced to 0.34 kOe after postannealing at 1000 {sup o}C. This suggests that the annealing led to the redistribution of Ni{sup 2+} ions to their equilibrium octahedral sites. Further, it is shown that the magnetically preferred direction of H{sub a} can be aligned perpendicular to the film plane when films are grown with a fixed oxygen pressure of 5 mTorr for films deposited at 700 and 900 {sup o}C.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
Sponsoring Organization:
Doe - Office Of Science
DOE Contract Number:
DE-AC02-98CH10886
OSTI ID:
930513
Report Number(s):
BNL-80483-2008-JA; JAPIAU; TRN: US200904%%567
Journal Information:
Journal of Applied Physics, Vol. 101; ISSN 0021-8979
Country of Publication:
United States
Language:
English