Advances in Thin-Film Proton-Reaction Cell Experiments
Thin-film electrodes (layers of the order of thousands of angstroms) offer several very important advantages for cold fusion research: Good reproducibility has been demonstrated, an extremely high power density is obtained in the thin film, and reaction rates can be optimized by appropriate selection of materials and interfaces. The motivation for thin films stems from the Swimming Electron Theory, which predicts that enhanced reaction rates can occur with the careful selection of interface materials. Recent experiments have concentrated on the measurement of the H or D loading (atoms H/atom metal), using thin (1-m-long, 50-{mu}m-diam) wires to simulate thin films. Wires facilitate measurement of the loading as a function of time during a run by use of a simple resistivity measurement. These experiments show that excess heat production is associated with a dynamic resistivity oscillation, both being suddenly initiated (coincidence within 2 to 3 s) when a D/Pd loading ratio >0.9 9 is achieved. The counterpart of these experiments involves use of a unique compact electrode design where thin films are coated onto a small glass slide to provide both the anode and cathode. Experiments with these compact electrodes have consistently produced >100 W/cm{sup 3} metal.
- Research Organization:
- University of Illinois at Urbana-Champaign, Urbana, IL (US)
- Sponsoring Organization:
- none (US)
- OSTI ID:
- 787501
- Report Number(s):
- ISSN 0003-018X; CODEN TANSAO; ISSN 0003-018X; CODEN TANSAO; TRN: US0109412
- Resource Relation:
- Conference: 2000 International Conference on Nuclear Science and Technology: Supporting Sustainable Development Worldwide (2000 ANS Winter Meeting), Washington, DC (US), 11/12/2000--11/16/2000; Other Information: Transactions of the American Nuclear Society, Volume 83; PBD: 12 Nov 2000
- Country of Publication:
- United States
- Language:
- English
Similar Records
SISGR: Atom chip microscopy: A novel probe for strongly correlated materials
Axial Ge/Si nanowire heterostructure tunnel FETs.