Oxide thickness dependence of high-energy-electron-, VUV-, and corona-induced charge in MOS capacitors
The radiation-induced flatband voltage shift of MOS capacitors using dry-O/sub 2/-grown SiO/sub 2/ is shown to vary as the square of oxide thickness for penetrating 1-MeV electron radiation and linearly with oxide thickness for nonpenetrating 10.2-eV photon radiation. Corona discharge experiments on unmetallized portions of the same oxidized silicon wafers also show a flatband voltage shift linearly dependent upon oxide thickness. These experiments provide strong evidence to support a simple generation, transport, and trapping model for radiation charging of SiO/sub 2/. The results also show that for dry oxides the density of trapped holes near the Si-SiO/sub 2/ interface is indepenent of oxidation time. (AIP)
- Research Organization:
- RCA Laboratories, David Sarnoff Research Center, Princeton, New Jersey 08540
- OSTI ID:
- 7345605
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 29:6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Charge yield and dose effects in MOS capacitors at 80 K
Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb{sub 2}O{sub 3}-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness
Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SEMICONDUCTOR DEVICES
PHYSICAL RADIATION EFFECTS
CAPACITORS
CORONA DISCHARGES
ELECTRON BEAMS
INTERFACES
MEV RANGE 01-10
OXIDES
SILICON
SILICON OXIDES
TRAPPING
BEAMS
CHALCOGENIDES
ELECTRIC DISCHARGES
ELECTRICAL EQUIPMENT
ELEMENTS
ENERGY RANGE
EQUIPMENT
LEPTON BEAMS
MEV RANGE
OXYGEN COMPOUNDS
PARTICLE BEAMS
RADIATION EFFECTS
SEMIMETALS
SILICON COMPOUNDS
360605* - Materials- Radiation Effects
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems