Influences of MBE growth processes on photovoltaic 3--5 [mu]m intersubband photodetectors

Journal Article · Fri Apr 01 04:00:00 UTC 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.278503· OSTI ID:7173427

Larkins, E C; Schneider, H; Ehret, S; Fleissner, J; Dischler, B; Koidl, P; Ralston, J D ^[1]

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1. Fraunhofer Inst. fuer Angewandte Festkoerperphysik, Freiburg (Germany)

The asymmetric photoresponse and dark current of GaAs/AlAs/Al[sub 0.3]Ga[sub 0.7]As 3-5[mu]m intersubband photodetectors is examined both experimentally and through simulations. The intended doping position is varied to determine the importance of dopant redistribution on the detector characteristics. Growth interruptions were introduced to determine the importance of inequivalent heterointerface roughness. An improved segregation model is developed which includes the influence of an incident doping flux. The growth-rate limited silicon incorporation coefficient during GaAs growth was determined as a function of growth temperature and growth rate from published SIMS profiles. The conduction band bending in these detectors was calculated semiclassically to estimate the applied voltage necessary to compensate the doping asymmetry. Si segregation explains 75--100% of the experimentally observed compensating voltage, without the introduction of fitting parameters. The remaining portion of the compensating voltage is largely due to asymmetric interface roughness. Growth interruptions reduce the linewidth of the QW intersubband absorption and also the detector responsivities, in apparent agreement with theoretical predictions.

• OSTI ID: 7173427
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:4; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

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47 OTHER INSTRUMENTATION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
DETECTION
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
EXPERIMENTAL DATA
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
INFRARED RADIATION
JUNCTIONS
MATERIALS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PHOTODETECTORS
PNICTIDES
RADIATION DETECTION
RADIATIONS
RESPONSE FUNCTIONS
SEMICONDUCTOR JUNCTIONS
THEORETICAL DATA