Characterization and modeling of the power Insulated Gate Bipolar Transistor

Thesis/Dissertation · Thu Jan 01 00:00:00 EST 1987

OSTI ID:7074389

Hefner, A R

The power Insulated Gate Bipolar Transistor (IGBT) is a new switching device designed to overcome the high on-state loss of the power MOSFET. The IGBT behaves as a bipolar transistor which is supplied base current by a MOSFET. The bipolar transistor of the IBGT has a wide base with the base contact at the collector edge of the base and is operated with its base in high-level injection. Because of this, the traditional bipolar transistor models are not adequate for the IBGT and the new model developed in this dissertation must be used. The new model is developed using ambipolar transport and does not assume the quasi-static condition for the transient analysis. The new IBGT model is used to describe measurements for extracting the essential physical device parameters of the model. With these extracted parameters, the new IGBT model consistently describes the measured electrical characteristics of IGBTs with different base lifetimes. The important electrical characteristics of the IGBT are the on-state I-V characteristics, the steady-state saturation current, and the switching transient current and voltage waveforms. The transient waveforms are examined in detail for constant anode voltage switching, clamped inductive load switching, and series resistor, inductor load switching.

• Research Organization: Maryland Univ., College Park (USA)
• OSTI ID: 7074389
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
FIELD EFFECT TRANSISTORS
TRANSISTOR SWITCHING CIRCUITS
FUNCTIONAL MODELS
ELECTRICAL PROPERTIES
MOSFET
PARAMETRIC ANALYSIS
WAVE FORMS
ELECTRONIC CIRCUITS
MOS TRANSISTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SWITCHING CIRCUITS
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)