Josephson tunnel junction with polycrystalline silicon, germanium or silicon-germanium alloy tunneling barrier

Patent · Tue Sep 02 00:00:00 EDT 1980

OSTI ID:6933521

Kroger, H

A Josephson tunnel junction device having niobium nitride superconductive electrodes includes a polycrystalline semiconductor tunnelling barrier therebetween comprised of silicon, germanium or an alloy thereof preferably deposited on the lower superconductive electrodes by chemical vapor deposition. The barrier height of the junction is precisely controlled by precision doping of the semiconductor material.

• Assignee: Sperry Corp
• Patent Number(s): US 4220959
• OSTI ID: 6933521
• Resource Relation: Patent File Date: Filed date 23 Mar 1979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
JOSEPHSON JUNCTIONS
DESIGN
SUPERCONDUCTORS
ELECTRODES
ELECTRONIC CIRCUITS
GERMANIUM
NIOBIUM NITRIDES
POLYCRYSTALS
SEMICONDUCTOR DEVICES
SILICON
TUNNEL EFFECT
VAPOR DEPOSITED COATINGS
COATINGS
CRYSTALS
ELEMENTS
JUNCTIONS
METALS
NIOBIUM COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SUPERCONDUCTING JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
420201* - Engineering- Cryogenic Equipment & Devices